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| Silicon Power Transistor 2SA1069, 1069A PNP 2SA1069,1069A DC/DC 2SA1069 TO-220AB 2SA1069A (TO-220AB) TA = 25C 2SA1069/2SA1069A - - - VCBO VCEO VEBO IC(DC) ( ) IC(pulse) PW 300 s, 10 % -2.5 TC = 25C TA = 25C Tj Tstg 30 1.5 150 -55 +150 A W W C C -80 -60 / -80 -12 -5.0 -10 V V V A A Duty Cycle IB(DC) PT ( D14855JJ3V0DS00 TC-5397A May 2000 NS CP(K) 3 1988, 2000 2SA1069,1069A TA = 25C - - 2SA1069 / 2SA1069A MIN. VCEO(SUS) VCEX(SUS)1 IC = -3.0 A, IB1 = -0.3 A, L = 1 mH IC = -3.0 A, IB1 = -IB2 = - 0.3 A, VBE(OFF) = 5.0 V, L = 180 H, Clamped -60/-80 -60/-80 TYP . MAX. V V - VCEX(SUS)2 IC = -6.0 A, IB1 = -0.6 A, IB2 = 0.3 A, VBE(OFF) = 5.0 V, L = 180 H, Clamped -60/-80 V ICBO ICER VCB = -60 / -80 V, IE = 0 A VCE = -60 / -80 V, RBE = 51 , TA = 125 -10 -1.0 A mA ICEX1 ICEX2 VCE = -60 / -80 V, VBE(OFF) = 1.5V VCE = -60 / -80 V, VBE(OFF) = 1.5V, TA = 125 -10 -1.0 A mA IEBO hFE1 hFE2 VCE(sat) VBE(sat) ton tstg tf VEB = -5.0 V, IC = 0 A VCE = -5.0 V, IC = -0.3 A VCE = -5.0 V, IC = -3.0 A IC = -3.0 A, IB = -0.3 A IC = -3.0 A, IB = -0.3 A IC = -3.0 A, RL = 17 , IB1 = -IB2 = -0.3 A, VCC -50 V 40 40 -10 A 200 -0.6 -1.5 0.5 2.5 0.5 V V s s s PW 350 s, Duty Cycle 2% hFE M hFE2 40 80 60 L 120 100 K 200 ton tstg tf RL VIN IB1 IC T.U.T. IB2 10 % IB2 VCC IB1 PW PW 50 s 2% VBB 5.0 V ton IC 90 % Duty Cycle tstg tf 2 D14855JJ3V0DS00 2SA1069,1069A TA = 25 C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 FORWARD BIAS SAFE OPERATING AREA -30 -10 IC(pulse) IC(DC) 1m s 10 m PW 30 100 s 0 s IC (A) 40 =3 0 s PT (W) 30 Di 100 m s ss s Lim ipa ite tion d -1 ited Lim S/b 20 10 -0.1 Single Pulse -0.03 -10 -1 2SA1069 2SA1069A 0 -25 0 50 100 TC (C) 150 -100 VCE (V) -1000 DERATING CURVE OF SAFE OPERATING AREA TRANSIENT THERMAL RESISTANCE 10 VCE = -20 V Tj = 50 C dT (%) rth(j-c) (C/W) d 100 80 60 40 20 0 s/b 1 D is Lim si ite pa tio n Li m 0.1 ite d 0 50 100 TC (C) 150 0.01 0.01 0.1 1 10 PW (ms) 100 REVERSE BIAS SAFE OPERATING AREA -10 -8 -6 -4 -2 2SA1069 2SA1069A COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -5 -4 -3 -2 -1 -80 mA -90 mA -100 mA -70 mA -60 mA IC (A) IC (A) -50 mA -40 mA -30 mA -20 mA IB = -10 mA 0 0 -40 -80 -120 VCE (V) 0 0 -1 -2 -3 -4 VCE (V) -5 D14855JJ3V0DS00 3 2SA1069,1069A DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 TA = 125C COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT -10 VBE(sat) (V) VCE(sat) (V) VCE = -5.0 V 75C 25C IC = 10 A IB hFE 100 -25C -1.0 VBE(sat) 10 -0.1 VCE(sat) 1 -0.01 -0.1 -1 IC (A) -10 -0.01 -0.01 -0.1 -1 IC (A) -10 TURN ON TIME, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT 10 IC = 10 IB1 = -10 IB2 ton ( s) tstg 1.0 ton tf 0.1 tf ( s) tstg ( s) 0.01 -0.1 -0.5 -1 IC (A) -5 -10 4 D14855JJ3V0DS00 2SA1069,1069A mm TO-220AB (MP-25) 3.00.3 10.6 MAX. 10.0 4.8 MAX. 3.60.2 5.9 MIN. 1.30.2 4 123 6.0 MAX. 1.30.2 12.7 MIN. 15.5 MAX. 0.750.1 2.54 TYP. 0.50.2 2.54 TYP. 1. 2. 3. 4. 2.80.2 D14855JJ3V0DS00 5 2SA1069,1069A 6 D14855JJ3V0DS00 2SA1069,1069A D14855JJ3V0DS00 7 2SA1069,1069A * * * * * * FAX E-mail 044-548-8899 044-548-7900 s-info@saed.tmg.nec.co.jp (03)3798-6106, 6107, 6108 (052)222-2375 (06)6945-3178, 3200, 3208, 3212 (022)267-8740 (024)923-5591 (043)238-8116 (03)3798-6110, 6111, 6112 (042)526-5981, 6167 (0263)35-1662 (054)254-4794 (076)232-7303 (089)945-4149 (03)3798-6151, 6155, 6586, 1622, 1623, 6156 (029)226-1702 (082)242-5504 (027)326-1303 (0857)27-5313 (0276)46-4014 (052)222-2170, 2190 (092)261-2806 http://www.ic.nec.co.jp/ C00.4 |
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